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eBook Silicon Molecular Beam Epitaxy: Symposium Held April 29-May 3, 1991, Anaheim, California, U.S.A. (Materials Research Society Symposium Proceedings) download

by John C Bean,Subramanian S Iyer,Kang L Wang

eBook Silicon Molecular Beam Epitaxy: Symposium Held April 29-May 3, 1991, Anaheim, California, U.S.A. (Materials Research Society Symposium Proceedings) download ISBN: 155899114X
Author: John C Bean,Subramanian S Iyer,Kang L Wang
Publisher: Materials Research Society; First edition (September 1, 1991)
Language: English
Pages: 649
ePub: 1980 kb
Fb2: 1481 kb
Rating: 4.7
Other formats: docx lrf lit rtf
Category: Engineering
Subcategory: Engineering

Topics covered include: homoepitaxy and substrate preparation; doping; GeSi growth; GeSi optical properties; GeSi electronic transport; device applications; epitaxial metals and insulators; novel materials and growth techniques.

Silicon Molecular Beam Epitaxy book. Silicon Molecular Beam Epitaxy: Symposium Held April 29-May 3, 1991, Anaheim, California, . 155899114X (ISBN13: 9781558991149).

International Symposium on Silicon Molecular Beam Epitaxy (4th : 1991 :, Anaheim, Calif. Download book Silicon molecular beam epitaxy : symposium held April 29-May 3, 1991, Anaheim, California, .

The European Materials Society decided to hold a Symposium entitled Materials and Processes for Submicron Technologies in June 16-19, 1998, within the yearly E-MRS Spring Meeting in Strasbourg, France.

Strasbourg, France, 30 (VOLS 183 & 184). ISBN-13: 978-0444886200. The 13-digit and 10-digit formats both work.

author {Jeffrey C. Gelpey}, year {1991} }. Jeffrey C. Gelpey.

Work on silicon molecular beam epitaxy (Si-MBE) is now .

Partially ionized molecular beam epitaxy (PI-MBE) is a useful method for growing heavily doped exitaxial films. Heavily As-doped Si films grown by Si PI-MBE were investigated. It is shown that high-quality structures may be fabricated by applying a potential to the substrate to obtain n-and p-type delta-layers during low-temperature growth of epitaxial layers from subliming silicon sources doped with antimony or gallium.

Silicon molecular beam epitaxy by Subramanian S. Iyer, Kang L. Wang, John C. .Silicon molecular beam epitaxy. symposium held April 29-May 3, 1991, Anaheim, California, .

Silicon molecular beam epitaxy. 1 2 3 4 5. Want to Read. Are you sure you want to remove Silicon molecular beam epitaxy from your list? Silicon molecular beam epitaxy. by Subramanian S. Bean.

Find nearly any book by Subramanian S. Iyer. Get the best deal by comparing prices from over 100,000 booksellers. Silicon Wafer Bonding Technology for VLSI and MEMS Applications (Emis Processing Series, 1).

Featuring papers from the 1991 MRS Spring Meeting (April 29 - May 3, Anaheim, California), this volume contains 93 papers presenting research in Si MBE, including a key paper from the special Late News session on light from porous silicon. Topics covered include: homoepitaxy and substrate preparation; doping; GeSi growth; GeSi optical properties; GeSi electronic transport; device applications; epitaxial metals and insulators; novel materials and growth techniques.
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